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!" " # $% $# ! "# $# % &'( ) $ # " '!**+ ! ,+ " ) '!**+ # " ? s d g & to-220ab absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 104 i d @ t c = 100c continuous drain current, v gs @ 10v 74 a i dm pulsed drain current 360 p d @t c = 25c power dissipation 200 w linear derating factor 1.3 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy 500 mj i ar avalanche current 54 a e ar repetitive avalanche energy 20 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and 55 to + 175 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case ) parameter typ. max. units r jc junction-to-case ??? 0.75 r cs case-to-sink, flat, greased surface 0.50 ??? c/w thermal resistance ??? 62 r ja juction-to-ambient mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) www.irf.com 1 8/3/04 $ 2 www.irf.com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ab("4-$ a 0 " " >0 5 )" ) =-$ ) " 5 +, ) " ;>"4c ? 9# ? < %%% %%% d " 7 9# ? < %%% %%% - ! 4 ! %%% %%% 1- ! &*$/() &$ ,(! &'! 07 0 7? %%% 1 ' *1' &*$/() &$ , 8 07 0 7? %%% 6$' =' . &1'',.+ 4 > ) 9 ?5 e5 < s d g , 1' 6' d ''+ ?? *f- i sd $ ,( . *',.+ (! ! ( 1=$/ ! &*$!( &*$/(5&* '+a 0 &*$ ? () &$ ,-9"41*< 07 ? - -9"-11< ) www.irf.com 3 ! 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 25c j vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 175c vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v j 1 10 100 1000 2.5 3.5 4.5 5.5 6.5 7.5 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) t = 175c j a v = 25v 20s pulse width ds -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 5v 90a 4 www.irf.com " #$ % ! " % &'"%( )% ! ) " % 0 2000 4000 6000 8000 10000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 3 6 9 12 15 0 40 80 120 160 200 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 13 i = 54a v = 44v v = 28v d ds ds 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 2.8 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c single pulse c j www.irf.com 5 &' ! "$ % v ds 90% 10% v gs t d(on) t r t d(off) t f "$ % *+ &', + - ./ 1 0.1 % ! 0 -g-- $-'! + - ! 25 50 75 100 125 150 175 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 6 www.irf.com 0 - + 0 - +*+ 1 )%*+ v ds l d.u.t. v dd i as t p 0.01 ? r g + - t p v ds i as v dd v (br)dss !" d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - )% q g q gs q gd v g charge !2 &'(+ ,% ! 0 200 400 600 800 1000 1200 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) v = 25v i top 22a 38a bottom 54a dd d www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - #3,4#, " 5 ! &$! 5 577 0 ! ? 7. ?0 ? 7 ? -g-- ? ) ??4 :: ? -g--7g 5? ? 5 "?) ? 3 d ? 5 5) 5 8 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market qualification standards can be found on ir?s web site. lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: in the assembly line "c" t his is an irf 1010 lot code 1789 as s e mb le d on ww 19, 1997 part number as s e mb l y lot code dat e code ye ar 7 = 1997 line c week 19 logo re ct if ie r int e rnat ional note: "p" in assembly line position indicates "lead-free" note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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